hspice book hspice ch18 1 Thu Jul 23 19 10 43 1998 Chapter 17 Using the Bipolar Transistor Model VBIC The VBIC Vertical Bipolar Inter Company model is a new bipolar transistor model for Star Hspice You can use VBIC by specifying parameter level 4 for bipolar transistor model VBIC addresses many problems of the SPICE Gummel Poon model More accurate modeling of Early effect Parasitic substrate transistor Modulation of collector resistance Avalance multiplication in collector junction parasitic capacitances neof base emitter overlap in double poly BJTs and self heating This chapter covers the following topics Understanding the History of VBIC Examining VBIC Equations Performing Noise Analysis Using VBIC Star Hspice Manual Release 1998 2 17 1 hspice book hspice ch18 2 Thu Jul 23 19 10 43 1998 Understanding the History of VBIC Using the Bipolar Transistor Model VBIC Understanding the History of VBIC VBIC was developed by engineers at several companies and is described in the following publication which provides a major reference to equations of the model C McAndrew J Seitchik D Bowers M Dunn M Foisy I Getreu M McSwain S Moinian J Parker D Roulston M Schroter P van Wijnen and L Wagner VBIC95 The vertical bipolar intercompany model IEEE Journal of Solid State Circuits vol 31 p 1476 1483 1996 The detailed equations for all elements are given in the above referenced publication Recent information and source code can be found on the web site http www sm rz fht esslingen de institute iafgp neu VBIC index html Our implementation is compliant to standard VBIC except that self heating and excess phases are not implemented or enabled The large signal equivalent circuit for VBIC is shown in Figure 17 1 Capacitors CBCO CBEO and resistors RCX RBX RE and RS are linear elements all other elements of the equivalent circuit are nonlinear 17 2 Star Hspice Manual Release 1998 2 hspice book hspice ch18 3 Thu Jul 23 19 10 43 1998 Using the Bipolar Transistor Model VBIC Examining VBIC Equations Examining VBIC Equations Table 17 1 lists the parameters for the model that you can set Table 1 1 also contains the default values for the parameters The same names are used for parameters in the table and in the above referenced publication Figure 17 1 Transient Analysis Substrate Collector CBCO Rcx Rs l Q bcp bcp RBIP q bp Base lbep Qbex Rci Q bep Rbi q b Rbx lbex Q bcx Q bc Q CBEO be l l bc gc lccp lcc lbe Re Emitter If values of parameters given by the user are beyond their ranges those parameters will be reset to new values and warnings will be printed unless the option NOWARN is set Star Hspice Manual Release 1998 2 17 3 hspice book hspice ch18 4 Thu Jul 23 19 10 43 1998 Performing Noise Analysis Using the Bipolar Transistor Model VBIC Performing Noise Analysis The following sources of noise are taken into account The thermal noise of resistors RBX RCX RE RS RBP RCI RBI Shot noise of currents IBE IBEP ICC ICCP Flicker noise due to currents IBE IBEP The noise due to IBEX and IGC is not included in this preliminary version nor in the standard VBIC but will be included in the next release Examples Usage Q1 21 22 22 22 VBIC parameters MODEL VBIC NPN parameters Complete netlist VBIC example DC analysis OPTIONS NODE POST NOPAGE WIDTH OUT 80 DC QVcolem 0 5 0 1 SWEEP QVbasem 0 7 0 86 0 05 TEMP 20 0 25 100 PRINT DC I1 Q1 I2 Q1 I3 Q1 I4 Q1 PRINT DC V 102 V 202 Vbas 101 0 QVbasem Vcol 102 0 QVcolem Vsub 104 0 0 Vemi 103 0 0 R1 101 201 10 R2 102 202 10 R4 104 204 10 R3 103 203 10 Q1 202 201 203 204 VBIC EXAMPLE model VBIC EXAMPLE npn level 4 17 4 Star Hspice Manual Release 1998 2 hspice book hspice ch18 5 Thu Jul 23 19 10 43 1998 Using the Bipolar Transistor Model VBIC Performing Noise Analysis afn 1 ajc 0 5 aje 0 5 ajs 0 5 avc1 0 avc2 0 bfn 1 cbco 0 cbeo 0 cjc 2e 14 cjcp 4e 13 cje le 13 cjep le 13 cth 0 ea 1 12 eaic 1 12 eaie 1 12 eais 1 12 eanc 1 12 eane 1 12 eans 1 12 fc 0 9 gamm 2e 11 hrcf 2 ibci 2e 17 ibcip 0 ibcn 5e 15 ibcnp 0 ibei 1e 18 ibeip 0 iben 5e 15 ibenp 0 ikf 2e 3 ikp 2e 4 ikr 2e 4 is le 16 isp le 15 itf 8e 2 kfn 0 mc 0 33 me 0 33 ms 0 33 nci 1 ncip 1 ncn 2 ncnp 2 nei 1 nen 2 nf 1 nfp 1 nr 1 pc 0 75 pe 0 75 ps 0 75 qco le 12 qtf 0 rbi 4 rbp 4 rbx 1 rci 6 rcx 1 re 0 2 rs 2 rth 300 tavc 0 td 2e 11 tf 10e 12 tnf 0 tr 100e 12 tnom 25 tref 25 vef 10 ver 4 vo 2 vtf 0 wbe 1 wsp 1 xii 3 xin 3 xis 3 xrb 0 xrc 0 xre 0 xrs 0 xtf 20 xvo 0 END Table 17 1 Default Model Parameters for BJT Level 4 Name Units Default Comments AFN 1 Flicker noise exponent for current AJC 0 5 Base collector capacitance switching parameter AJE 0 5 Base emitter capacitance switching parameter AJS 0 5 Substrate collector capacitance switching parameter AVC1 V 1 0 Base collector weak avalanche parameter 1 AVC2 V 1 0 Base collector weak avalanche parameter 2 Star Hspice Manual Release 1998 2 17 5 hspice book hspice ch18 6 Thu Jul 23 19 10 43 1998 Performing Noise Analysis Name Units BFN Using the Bipolar Transistor Model VBIC Default Comments 1 Flicker noise exponent for 1 f dependence CBCO CBC0 F 0 Extrinsic base collector overlap capacitance CBEO CBE0 F 0 Extrinsic base emitter overlap capacitance CJC F 0 Base collector intrinsic zero bias capacitance CJCP F 0 Substrate collector zero bias capacitance CJE F 0 Base emitter zero bias capacitance CJEP F 0 Base collector extrinsic zero bias capacitance CTH J K 0 Thermal capacitance EA eV 1 12 Activation energy for IS EAIC eV 1 12 Activation energy for IBCI IBEIP EAIE eV 1 12 Activation energy for IBEI EAIS eV 1 12 Activation energy for IBCIP EANC eV 1 12 Activation energy for IBCN IBENP EANE eV 1 12 Activation energy for IBEN EANS eV 1 12 Activation energy for IBCNP FC 0 9 Forward bias depletion capacitance limit GAMM 0 Epi doping parameter HRCF 1 High current RC factor IBCI A 1e 16 Ideal base collector saturation current IBCIP A 0 Ideal parasitic base collector saturation current IBCN A 1e 15 Non ideal base collector saturation current 17 6 Star Hspice Manual Release 1998 2 hspice book hspice ch18 7 Thu Jul 23 19 10 43 1998 Using the Bipolar Transistor Model VBIC Name Units Performing Noise Analysis Default Comments IBCNP A …