2N4400 / MMBT4400NPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 40 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 6.0 VICCollector Current - Continuous600 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150°CSymbol Characteristic Max Units2N4400 *MMBT4400PDTotal Device DissipationDerate above 25°C6255.03502.8mWmW/°CRθJCThermal Resistance, Junction to Case 83.3°C/WRθJAThermal Resistance, Junction to Ambient 200 357°C/WCBESOT-23Mark: 83MMBT44002N4400CBETO-92 2001 Fairchild Semiconductor Corporation2N4400/MMBT4400, Rev A2N4400 / MMBT4400NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25°C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 VV(BR)CBOCollector-Base Breakdown VoltageIC = 100 µA, IE = 060 VV(BR)EBOEmitter-Base Breakdown VoltageIE = 100 µA, IC = 06.0 VICEXCollector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1µAIBLEmitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1µAON CHARACTERISTICS*hFEDC Current Gain VCE = 1.0 V, IC = 1.0 mAVCE = 1.0 V, IC = 10 mAVCE = 1.0 V, IC = 150 mAVCE = 2.0 V, IC = 500 mA20405020150VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB =15 mAIC = 500 mA, IB = 50 mA0.400.75VVVBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB =15 mAIC = 500 mA, IB = 50 mA0.75 0.951.2VVSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pFCibInput Capacitance VEB = 0.5 V, f = 140 kHz 30 pFhfeSmall-Signal Current Gain IC = 20 mA, VCE = 10 V,f = 100 MHz2.0hfeSmall-Signal Current Gain VCE = 10 V, IC = 1.0 mA, 20 250hieInput Impedance f = 1.0 kHz 0.5 7.5KΩhreVoltage Feedback Ratio 0.1 8.0x 10-4hoeOutput Admittance 1.0 30µmhosSWITCHING CHARACTERISTICS*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%tdDelay TimeVCC = 30 V, IC = 150 mA,15nstrRise Time IB1 = 15 mA ,VEB = 2 VtsStorage Time VCC = 30 V, IC = 150 mA 225 nstfFall Time IB1 = IB2 = 15 mA 30 ns20nsTypical CharacteristicsTypical Pulsed Current Gainvs Collector Current0.1 0.3 1 3 10 30 100 3000100200300400500I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 °C25 °C- 40 °CV = 5VCECollector-Emitter SaturationVoltage vs Collector Current 1101005000.10.20.30.4I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT25 °CCβ= 10125 °C- 40 °CBase-Emitter SaturationVoltage vs Collector Current 1 10 100 5000.40.60.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATCβ = 1025 °C125 °C- 40 °CBase-Emitter ON Voltage vsCollector Current0.1 1 10 250.20.40.60.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE (ON)CV = 5VCE 25 °C125 °C- 40 °CCollector-Cutoff Currentvs Ambient Temperature25 50 75 100 125 1500.1110100500T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 40VCBCBO°Emitter Transition and OutputCapacitance vs Reverse Bias Voltage0.1 1 10 10048121620REVERSE BIAS VOLTAGE (V)CAPACITANCE (pF)f = 1 MHzCobC NPN General Purpose Amplifierte(continued)2N4400 / MMBT4400Typical Characteristics (continued)Power Dissipation vsAmbient Temperature0 25 50 75 100 125 15000.250.50.751TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223TO-92SOT-23Turn On and Turn Off Timesvs Collector Current10 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = tont offB1CB2Ic10V = 25 VccSwitching Timesvs Collector Current10 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = trt sB1CB2Ic10V = 25 VcctftdNPN General Purpose Amplifier(continued)2N4400 / MMBT4400Typical Common Emitter Characteristics (f = 1.0kHz)Common Emitter Characteristics0 10203040506002468I - COLLECTOR CURRENT (mA)CHAR. RELATIVE TO VALUES AT I = 10mAV = 10 VCE CCT = 25 CA o hoe hre hfe hie Common Emitter Characteristics0 2040608010000.40.81.21.622.4T - AMBIENT TEMPERATURE ( C)CHAR. RELATIVE TO VALUES AT T = 25 CV = 10 VCE AAI = 10 mAC hoe hre hfe hie ooCommon Emitter Characteristics0 5 10 15 20 25 30 350.750.80.850.90.9511.051.11.151.21.251.3V - COLLECTOR VOLTAGE (V)CHAR. RELATIVE TO VALUES AT V = 10VCECET = 25 CA o hoe hre hfe hie I = 10 mACNPN General Purpose Amplifier(continued)2N4400 / MMBT4400Test Circuits30 V1.0 KΩΩΩΩΩ16 V0≤≤≤≤≤ 200ns≤≤≤≤≤ 200ns500 ΩΩΩΩΩ200 ΩΩΩΩΩ50 ΩΩΩΩΩ37 ΩΩΩΩΩ- 1.5 V1.0 KΩΩΩΩΩ6.0 V030 VFIGURE 1: Saturated Turn-On Switching TimerNOTE: BV = 5.0 VFIGURE 2: Saturated Turn-Off Switching TimeEBO1kNPN General Purpose Amplifier(continued)2N4400 / MMBT4400TO-92 Tape and Reel DataMarch 2001, Rev. B1©2001 Fairchild Semiconductor CorporationTO-92 PackagingConfiguration: Figure 1.0AMMO PACK OPTIONSee Fig 3.0 for 2 AmmoPack Options2000 units perEO70 box for std optionFSCINT Label530mm x 130mm x 83mmIntermediate box10,000 units maximumper intermediate boxfor std optionFSCINT Label114mm x 102mm x 51mmImmediate BoxAnti-static Bubble Sheets(TO-92) BULK PACKING INFORMATIONEOLCODEDESCRIPTIONLEADCLIPDIMENSIONQUANTITYJ18ZTO-18 OPTION STD NO LEAD CLIP2.0 K / BOXJ05ZTO-5 OPTION STD NO LEAD CLIP1.5 K / BOXNO EOLCODETO-92 STANDARDSTRAIGHT FOR: PKG 92,NO LEADCLIP2.0 K / BOXBULK OPTIONSee Bulk PackingInformation table375mm x 267mm x 375mmIntermediate BoxFSCINTLabelCustomizedLabel333mm x 231mm x 183mmIntermediate BoxFSCINTLabelCustomizedLabelTO-92 TNR/AMMO PACKING INFROMATIONPacking Style Quantity EOL codeReel A 2,000 D26ZE2,000 D27ZAmmo M 2,000 D74ZP2,000 D75ZUnit weight = 0.22 gmReel weight with components = 1.04 kgAmmo weight with components = 1.02 kgMax quantity per intermediate box = 10,000 unitsF63TNRLabel5 Ammo boxes per Intermediate BoxCustomizedLabel327mm x 158mm x 135mmImmediate BoxLOT: CBVK741B019NSID: PN2222ND/C1: D9842 SPEC REV: B2SPEC: