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1California State University, SacramentoCollege of Engineering and Computer ScienceDepartment of Electrical and Electronic EngineeringCPE 102 - 01, Analog/Digital Electronics, Spring 2007Homework #2 (Due Wednesday, 3/7/07) Each problem is worth 2 points unless otherwisespecified. Show all work.1. A silicon diode has a characteristic reverse saturation current (Is = 2.3x10-14 A) when itoperates in an electronic chassis at an ambient temperature of 28 °C. Assume thenonideality factor for this diode is n=1. The diode is driven by an ideal current source at2.5 mA as shown in the figure. Find the following:a. The diode voltage (VD).b. The expected change in diode voltage (ΔVD) if the temperature decreases by 20 °Cand the diode current is maintained constant at 2.5 mA.2. (4 pts.) Assume a silicon Zener diode at "room temperature" has the followingcharacteristics:a. Junction crossectional area A = 3x105 µm2.b. A reverse bias breakdown voltage VR = 7.21 V, and junction potential φj = 0.932 Vc. ni = 1010 / cm3, εs = 1.04x10-12 F/cm, and Emax = 3x105 V/cm for silicon at breakdown.Find the following:a. The width of the diode depletion region at breakdown (wd).b. The donor and acceptor doping concentrations (ND and NA). Let ND = NA for thisdiode.c. The reverse bias junction capacitance of the diode at breakdown (Cj).d. The forward bias diffusion capacitance (CD) of the diode, if the diode transit time(τΤ = 11 ns) and the diode current (ID = 3.5 ma).3. Given a silicon diode with Is = 2.3x10-16 A operating at "room temperature", find the Q-point (VD, ID) for the diode in the following circuit, where Vs = 1.00 V and R = 82 Ω.Determine the Q-point current and voltage values to three significant figures using anytwo of the methods in the following hint! Hint: You should consider one of three waysto do this: Graphical Load Line solution, Transcendental Equation solution, and PSpicesolution.24. a) A Zener diode with a nominal breakdown voltage (Bv) of 7 volts, demonstrates aZener voltage of 7.483 V and a Zener current of 347 µA when operating in its breakdownregion. Determine the diode’s effective Zener resistance (RZ). b) If this diode is placedin the following voltage regulation circuit, determine the value of R necessary to have itoperate with the Zener voltage and current in part a.5. (3 pts.) Determine the Q points (VD, ID) for each of the three diodes in the circuit shownbelow. (Note: Assume 0.6 V for the voltage drop across a forward biased diode. Takean “educated guess” at the on/off condition of each diode, analyze the circuit and checkyour assumptions.)R1 = 2.2 kΩ, R2 = 1.8 kΩ, R3 = 1 kΩ, R4 = 3.3 kΩ6. (3 pts.) The half-wave rectified power supply circuit, shown in figure 3.61(b) in your text,is to be designed with the following specifications: f = 60 Hz, vS(rms) = 25.2 V, R = 9 Ω,Vs+-R3and Vr = 0.25 V. Find: vo, C, ISC, IP, PIV, and PD (Total). (You should assume Von = 1.2 V,and Rs = 125 mΩ here.)7. Do Problem 3.131(b) in your text.8. Do problem 3.144 in your text. (Assume a 0.75 voltage drop across the forward


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Sac State EEE 102 - EEE 102 Homework 2

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