Problem set #1CHE 312 __________________ LAST NAME, FIRST Problem set #11-8 Copy the program heat1.exe from the class distribution folder to your flash or H drive. Youcan also download the program from the website: https://www.csupomona.edu/~tknguyen/che312/homework.htm. Run the program and choose problem 1-8 in any order. Solve the problems with the data providedby the program, copy the problem statement to Word. The program will check your answer andprovide an answer code when you click on “Check”. Copy the answer code and paste them afterthe problem statement. You need to present all your work with a diagram in details to get fullcredit. Your work should look like this:1) An annealing process shown below uses a hot plate operating at an elevated temperature Th.The wafer, initially at a temperature of Tw,i, is suddenly positioned at a gap separation h = 0.5 mmfrom the hot plate. The emissivity of both the hot plate and the wafer is 1.0. The silicon wafer hasa thickness of d = 0.80 mm, a density of 2700 kg/m3, and a specific heat of 1050 J/kgK. Thethermal conductivity of the gas in the gap is 0.0436 W/mK. The wafer is insulated at thebottom. Stefan-Boltzmann constant  = 5.6710-8 W/m2K4. For Th = 700oC and Tw,i = 25oC,calculate the radiative heat flux across the gapProblem 1: Correct, Code =4313336481Solutiongap hHot plate, ThSilicon wafer, TwStagnant gas, k The radiative heat flux across the gap5.6710-8[(700 + 273)4  (25 + 273)4] = 50,370 W/m2Box the