TITLECONTENTSREVISION HISTORY1.0 APPLICATIONS2.0 PRINCIPLES OF OPERATION2.1 Integrated Stop Timer2.2 Write Protection2.2.1 BUS OPERATIONS2.2.1.1 Read2.2.1.2 Output Disable2.2.1.3 Standby2.2.1.4 Intelligent Identifier Operation2.2.1.5 Write2.2.2 COMMAND DEFINITIONS2.2.2.1 Read Command2.2.2.2 Intelligent Identifier Command2.2.2.3 Set-Up Erase/Erase Commands2.2.2.4 Erase Verify Command2.2.2.5 Set-Up Program/Program Commands2.2.2.6 Program Verify Command2.2.2.7 Reset Command2.2.3 EXTENDED ERASE/PROGRAM CYCLING2.2.4 QUICK-PULSE PROGRAMMING ALGORITHM3.0 DESIGN CONSIDERATIONS3.1 Two-Line Output Control3.2 Power Supply Decoupling3.3 VPP Trace on Printed Circuit Boards3.4 Power-Up/Down Protection3.5 5 Volt Bulk Erase Power Dissipation4.0 ELECTRICAL SPECIFICATIONS4.1 Absolute Maximum Ratings*4.2 Operating Conditions4.3 Capacitance4.4 DC Characteristics—28F010—TTL/NMOS Compatible Commercial Products4.5 DC Characteristics—28F020—TTL/NMOS Compatible Commercial Products4.6 DC Characteristics—28F010—CMOS Compatible Commercial Products4.7 DC Characteristics—28F020—CMOS Compatible Commercial Products4.8 DC Characteristics—28F010—TTL/NMOS Compatible Extended Temperature Products4.9 DC Characteristics—28F020—TTL/NMOS Compatible Extended Temperature Products4.10 DC Characteristics—28F010—CMOS Compatible Extended Temperature Products4.11 DC Characteristics—28F020—CMOS Compatible Extended Temperature Products4.12 AC Characteristics—28F010—Read-Only Operations Commercial and Extended Temperature Products4.13 AC Characteristics—28F020—Read Only Operations Commercial and Extended Temperature Products4.14 AC Characteristics—28F010—Write/Erase/Program Only Operations (1) Commercial and Extended Temperature Products4.15 AC Characteristics—28F020—Write/Erase/Program Only Operations (1) Commercial and Extended Temperature Products4.16 AC Characteristics—28F010—Alternative CE#-Controlled Writes (1) Commercial and Extended Temperature4.17 AC Characteristics—28F020—Alternate CE# Controlled Writes (1) Commercial and Extended Temperature Products4.18 Erase and Programming Performance5.0 ORDERING INFORMATION6.0 ADDITIONAL INFORMATIONFIGURESFigure 1. 28F020 Block DiagramFigure 2. 28F010/28F020 Pin ConfigurationsFigure 3. 28F020 in a 80C186 SystemFigure 4. 28F010/28F020 Quick-Pulse Programming AlgorithmFigure 5. 28F010/28F020 Quick-Erase AlgorithmFigure 6. Testing Input/Output WaveformFigure 7. AC Testing Load CircuitFigure 8. AC Waveforms for Read OperationsFigure 9. 28F010 Typical Programming CapabilityFigure 10. 28F010 Typical Program Time at 12 VFigure 11. 28F010 Typical Erase CapabilityFigure 12. 28F010 Typical Erase Time at 12 VFigure 13. 28F020 Typical Programming CapabilityFigure 14. 28F020 Typical Program Time at 12 VFigure 15. 28F020 Typical Erase CapabilityFigure 16. 28F020 Typical Erase Time at 12 VFigure 17. AC Waveforms for Programming OperationsFigure 18. AC Waveforms for Erase OperationsFigure 19. Alternate AC Waveforms for Programming OperationsTABLESTable 1. Pin DescriptionTable 2. 28F010/28F020 Bus OperationsTable 3. Command DefinitionsTable 4. 5 Volt Bulk Erase Typical Update Power Dissipation (4)E December 1998 Order Number: 290663-001nFlash Electrical Chip-Erase1-Mbit: 1 Second Typical Chip-Erase2-Mbit: 2 Second Typical Chip-ErasenQuick-Pulse Programming Algorithm10 µs Typical Byte-Program1-Mbit: 1 Second Chip-Program2-Mbit: 2 Second Chip-Programn100,000 Erase/Program Cyclesn12.0 V ±5% VPPnHigh-Performance Read90 ns Maximum Access TimenCMOS Low Power Consumption10 mA Typical Active Current50 µA Typical Standby Current0 Watts Data Retention PowernIntegrated Program/Erase Stop TimernCommand Register Architecture forMicroprocessor/MicrocontrollerCompatible Write InterfacenNoise Immunity Features±10% VCC ToleranceMaximum Latch-Up Immunitythrough EPI ProcessingnETOX™ Nonvolatile Flash TechnologyEPROM-Compatible Process BaseHigh-Volume ManufacturingExperiencenJEDEC-Standard Pinouts32-Pin Plastic Dip32-Lead PLCC32-Lead TSOP(See Packaging Spec., Order #231369)nExtended Temperature OptionsThe Intel® 5 Volt Bulk Erase CMOS flash memory offers the most cost-effective and reliable alternative forread/write random access nonvolatile memory. The 28F010 and 28F020 add electrical chip-erasure andreprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in aPROM-programmer socket; on-board during subassembly test; in-system during final test; and in-systemafter sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings.The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Similarly, the28F020 is a 2048 kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Both devices areoffered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDECstandards for byte-wide EPROMs.Extended erase and program cycling capability is designed into Intel® ETOX™ (EPROM Tunnel Oxide)process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric fieldcombine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the28F010 and 28F020 perform 100,000 erase and program cycles—well within the time limits of the quick-pulse programming and quick-erase algorithms.The Intel 28F010 and 28F020 employ advanced CMOS circuitry for systems requiring high-performanceaccess speeds, low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-upprotection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stressesup to 100 mA on address and data pins, from –1 V to VCC + 1 V.With Intel ETOX process technology base, the 28F010 and 28F020 build on years of EPROM experience toyield the highest levels of quality, reliability, and cost-effectiveness.5 VOLT BULK ERASEFLASH MEMORY28F010 and 28F020 (x8)Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel orotherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and