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Low Noise, Matched Dual Monolithic Transistor

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REV. CInformation furnished by Analog Devices is believed to be accurate andreliable. However, no responsibility is assumed by Analog Devices for itsuse, nor for any infringements of patents or other rights of third partieswhich may result from its use. No license is granted by implication orotherwise under any patent or patent rights of Analog Devices.aLow Noise, MatchedDual Monolithic TransistorMAT02One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 617/329-4700 Fax: 617/326-8703FEATURESLow Offset Voltage: 50 mV maxLow Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz maxHigh Gain (hFE): 500 min at IC = 1 mA300 min at IC = 1 mAExcellent Log Conformance: rBE . 0.3 VLow Offset Voltage Drift: 0.1 mV/8C maxImproved Direct Replacement for LM194/394Available in Die FormORDERING GUIDE1VOS max Temperature PackageModel (TA = +258C) Range OptionMAT02AH250 µV –55°C to +125°C TO-78MAT02EH 50 µV –55°C to +125°C TO-78MAT02FH 150 µV –55°C to +125°C TO-78NOTES1Burn-in is available on commercial and industrial temperature range parts inTO-can packages.2For devices processed in total compliance to MIL-STD-883, add /883 after partnumber. Consult factory for 883 data sheet.ABSOLUTE MAXIMUM RATINGS1Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . .40 VCollector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . .40 VCollector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . .40 VEmitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . .40 VCollector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mAEmitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mATotal Power DissipationCase Temperature ≤ 40°C2 . . . . . . . . . . . . . . . . . . . . .1.8 WAmbient Temperature ≤ 70°C3 . . . . . . . . . . . . . . . .500 mWOperating Temperature RangeMAT02A . . . . . . . . . . . . . . . . . . . . . . . . . .–55°C to +125°CMAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . .–25°C to +85°COperating Junction Temperature . . . . . . . . . .–55°C to +150°CStorage Temperature . . . . . . . . . . . . . . . . . . .–65°C to +150°CLead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300°CJunction Temperature . . . . . . . . . . . . . . . . . .–65°C to +150°CNOTES1Absolute maximum ratings apply to both DICE and packaged devices.2Rating applies to applications using heat sinking to control case temperature.Derate linearly at 16.4 mW/°C for case temperature above 40°C.3Rating applies to applications not using a heat sinking; devices in free air only.Derate linearly at 6.3 mW/°C for ambient temperature above 70°C.NOTESubstrate is connected to case on TO-78 package. Sub-strate is normally connected to the most negative circuitpotential, but can be floated.PIN CONNECTIONTO-78(H Suffix)PRODUCT DESCRIPTIONThe design of the MAT02 series of NPN dual monolithic tran-sistors is optimized for very low noise, low drift, and low rBE.Precision Monolithics’ exclusive Silicon Nitride “Triple-Passivation” process stabilizes the critical device parametersover wide ranges of temperature and elapsed time. Also, the highcurrent gain (hFE) of the MAT02 is maintained over a widerange of collector current. Exceptional characteristics of theMAT02 include offset voltage of 50 µV max (A/E grades) and150 µV max F grade. Device performance is specified over thefull military temperature range as well as at 25°C.Input protection diodes are provided across the emitter-basejunctions to prevent degradation of the device characteristicsdue to reverse-biased emitter current. The substrate is clampedto the most negative emitter by the parasitic isolation junctioncreated by the protection diodes. This results in complete isola-tion between the transistors.The MAT02 should be used in any application where low noiseis a priority. The MAT02 can be used as an input stage to makean amplifier with noise voltage of less than 1.0 nV/√Hz at 100 Hz.Other applications, such as log/antilog circuits, may use the ex-cellent logging conformity of the MAT02. Typical bulk resis-tance is only 0.3 Ω to 0.4 Ω. The MAT02 electrical charac-teristics approach those of an ideal transistor when operated overa collector current range of 1 µA to 10 mA. For applications re-quiring multiple devices see MAT04 Quad Matched Transistordata sheet.REV. C–2–ELECTRICAL CHARACTERISTICS MAT02A/E MAT02FParameter Symbol Conditions Min Typ Max Min Typ Max UnitsCurrent Gain hFEIC = 1 mA1500 605 400 605IC = 100 µA 500 590 400 590IC = 10 µA 400 550 300 550IC = 1 µA 300 485 200 485Current Gain Match ∆hFE10 µA ≤ IC ≤ 1 mA20.5 2 0.5 4 %Offset Voltage VOSVCB = 0, 1 µA ≤ IC ≤ 1 mA310 50 80 150 µVOffset Voltage ∆VOS/∆VCB0 ≤ VCB ≤ VMAX,410 25 10 50 µVChange vs. VCB1 µA ≤ IC ≤ 1 mA310 25 10 50 µVOffset Voltage Change ∆VOS/∆ICVCB = 0 V 5 25 5 50 µVvs. Collector Current 1 µA ≤ IC ≤ 1 mA3525 5 50µVOffset CurrentChange vs. VCB∆IOS/∆VCB0 ≤ VCB ≤ VMAX30 70 30 70 pA/VBulk Resistance rBE10 µA ≤ IC ≤ 10 mA50.3 0.5 0.3 0.5 ΩCollector-BaseLeakage Current ICBOVCB = VMAX25 200 25 400 pACollector-CollectorLeakage Current ICCVCC = VMAX5, 635 200 35 400 pACollector-Emitter VCE = VMAX5, 6Leakage Current ICESVBE = 0 35 200 35 400 pANoise Voltage Density enIC = 1 mA, VCB = 07 fO = 10 Hz 1.6 2 1.6 3 nV/√Hz fO = 100 Hz 0.9 1 0.9 2 nV/√Hz fO = 1 kHz 0.85 1 0.85 2 nV/√Hz fO = 10 kHz 0.85 1 0.85 2 nV/√HzCollector SaturationVoltage VCE(SAT)IC = 1 mA, IB = 100 µA 0.05 0.1 0.05 0.2 VInput Bias Current IBIC = 10 µA2534nAInput Offset Current IOSIC = 10 µA 0.6 1.3 nABreakdown Voltage BVCEO40 40 VGain-Bandwidth Product fTIC = 10 mA, VCE = 10 V 200 200 MHzOutput Capacitance COBVCB = 15 V, IE = 0 23 23 pFCollector-CollectorCapacitance CCCVCC = 0 35 35 pFNOTES1Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 to VMAX at the indicated collector currents.2Current gain match (∆hFE) is defined as: ∆hFE =3Measured at IC = 10 µA and guaranteed by design over the specified range of IC.4This is the maximum change in VOS as VCB is swept from 0 V to 40 V.5Guaranteed by design.6ICC and ICES are verified by measurement of ICBO.7Sample tested.Specifications subject to change without notice.100 (∆IB) (hFE min)ICMAT02–SPECIFICATIONS(@ VCB = 15 V, IC = 10 mA, TA = 258C, unless otherwise noted.)MAT02AParameter Symbol Conditions Min Typ Max


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