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Spin Transport in Nanowires



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Spin Transport in Nanowires arXiv cond mat 0306082 v1 3 Jun 2003 S Pramanik and S Bandyopadhyay Department of Electrical Engineering Virginia Commonwealth University Richmond Virginia 23284 USA M Cahay Department of Electrical and Computer Engineering and Computer Science University of Cincinnati Cincinnati Ohio 45221 Abstract We study high field spin transport of electrons in a quasi one dimensional channel of a GaAs gate controlled spin interferometer SPINFET using a semiclassical formalism spin density matrix evolution coupled with Boltzmann transport equation Spin dephasing or depolarization is predominantly caused by D yakonov Perel relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry Dresselhaus spin orbit coupling and structural inversion asymmetry Rashba spin orbit coupling Spin dephasing length in a one dimensional channel has been found to be an order of magnitude higher than that in a two dimensional channel This study confirms that the ideal configuration for a SPINFET is one where the ferromagnetic source and drain contacts are magnetized along the axis of the channel The spin dephasing length in this case is about 22 5 m at lattice temperature of 30K and 10 m at lattice temperature of 77K for an electric field of 2kV cm Spin dephasing length has been found to be weakly dependent on the driving electric field and strongly dependent on the lattice temperature 1 Introduction Spin transport in semiconductor nanostructures has attracted significant research interest due to its promising role in implementing novel devices which operate at decreased power level and enhanced data processing speed Additionally spin is considered to be the ideal candidate for encoding qubits in quantum logic gates 3 because spin coherence time in semiconductors 2 is much longer than charge coherence time 4 In this paper we study spin transport of electrons in a quasi one dimensional structure In the past we



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