Slide 1Team MembersTeam ResponsibilitiesGroup MotivationOverviewKey SpecificationsTimelineSystem ComponentsFabrication ProcessEpitaxial GrowthPhotolithographyMetalizationLift – Off / EtchingPackagingStart OverSensorDesign EquationsSiC Plot of Resistance vs. TemperatureController BoardCost AnalysisSlide 21Silicon CarbideTemperature Sensorfor Harsh EnvironmentsChris Rice Jason WallaceMichael Jackson Jovan BjelobrkADVISORDr. Stephen Saddow“a hot project…a cool advisor”Team MembersTeam ResponsibilitiesJovan BjelobrkJason WallaceMichael JacksonChris RiceProject Planning/CoordinationSensor DesignFabricationSensor DesignDocumentationSoftware/Web DesignDocumentationDevice Controller DesignGroup MotivationResearch of New SystemResearch of New Materials in Semiconductor TechnologyNeed one more here !!!!!!!!OverviewNo reliable way to detect temperature changes in extreme environments using typical semiconductor material (Si)Space travel involves extreme temperaturesSiC has the ability to operate in and withstand extreme temperatures (>500 °C)Key Specifications Increased Sensing Range 25 ° C to 500 ° C Tolerance Temperature reading accuracy of 0.5 °C at 25 °C Cost Cost of working unit will be less than $300TimelineFebruary March April MayHardware Sensor Circuit BoardSoftware PIC Programming User InterfacePerformance TestingTroubleshootingFinished ProductSystem Components•Temp. Sensing•Voltage Output•A/D Conversion•Serial Interface•Temp. Display•Advanced FunctionsPicture of SiC sampleBreadboardedCircuitWindows InterfaceFabrication ProcessEpitaxial GrowthPhotolithographyMetalizationContact AnnealingPackagingStart OverEpitaxial Growthp+ n-n+Photolithographyp+ n-n+Metalizationp+ n-Lift – Off / Etchingp+ n-PackagingNeed a packaging picture hereStart OverThis part sucks !!!!SensorDesign EquationsR = *(L/A) A = W*t = 1/(n*q*n)Ni = sqrt(nc*nd)*e(-Eg/2*k*T)n = (2.5*107)*T-2SiC Plot of Resistance vs. TemperatureTest Spec of 25 to 500 degrees C0 50 100 150 200 250 300 350 400 450 5000123456x 104Temperature [C]Resistance [Ohms]TheoreticalMeasuredController BoardActual Picture will go hereCost AnalysisApproximately $2000 per substrate (2 inch diameter wafer)Approximately $600 for whole-wafer EPI GrowthApproximately $400 for Fabrication RunProducing 24 cells per wafer, and assuming overall yield of process of 72%, produces 120 usable devices at approximately $25 eachControl board components: $26.61Total cost for working unit: $51.61Silicon CarbideTemperature Sensorfor Harsh
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