DatasheetDisclaimerDocument Number: 91297 www.vishay.comS09-0057-Rev. A, 02-Feb-09 1Power MOSFETIRL510, SiHL510Vishay SiliconixFEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Logic-Level Gate Drive•RDS(on) Specified at VGS = 4 V and 5 V• 175 °C Operating Temperature• Fast Switching• Ease of Paralleling• Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, RG = 25 Ω, IAS = 5.6 A (see fig. 12).c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.d. 1.6 mm from case.PRODUCT SUMMARYVDS (V) 100RDS(on) (Ω)VGS = 5.0 V 0.54Qg (Max.) (nC) 6.1Qgs (nC) 2.6Qgd (nC) 3.3Configuration SingleN-Channel MOSFET GDSTO-220GDSAvailableRoHS*COMPLIANTORDERING INFORMATIONPackage TO-220Lead (Pb)-freeIRL510PbFSiHL510-E3SnPbIRL510SiHL510ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS100V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 VTC = 25 °C ID5.6ATC = 100 °C 4.0Pulsed Drain CurrentaIDM 18Linear Derating Factor 0.29 W/°C Single Pulse Avalanche EnergybEAS 100 mJ Repetitive Avalanche CurrentaIAR 5.6 A Repetitive Avalanche EnergyaEAR4.3 mJ Maximum Power Dissipation TC = 25 °C PD43 W Peak Diode Recovery dV/dtcdV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg- 55 to + 175°C Soldering Recommendations (Peak Temperature) for 10 s 300dMounting Torque 6-32 or M3 screw10 lbf · in1.1 N · m* Pb containing terminations are not RoHS compliant, exemptions may applywww.vishay.com Document Number: 912972 S09-0057-Rev. A, 02-Feb-09IRL510, SiHL510Vishay SiliconixNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYP. MAX. UNITMaximum Junction-to-Ambient RthJA-62°C/WCase-to-Sink, Flat, Greased SurfaceRthCS0.50 -Maximum Junction-to-Case (Drain)RthJC-3.5SPECIFICATIONS TJ = 25 °C, unless otherwise notedPARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITStaticDrain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA-0.12-V/°C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25µA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 3.4 Ab- - 0.54ΩVGS = 4.0 V ID = 2.8 Ab- - 0.76Forward Transconductance gfs VDS = 50 V, ID = 3.4 Ab1.9 - - S DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 -250-pFOutput Capacitance Coss -80-Reverse Transfer Capacitance Crss -15-Total Gate Charge Qg VGS = 5.0 V ID = 5.6 A, VDS = 80 V see fig. 6 and 13b--6.1nC Gate-Source Charge Qgs --2.6Gate-Drain Charge Qgd --3.3Turn-On Delay Time td(on) VDD = 50 V, ID = 5.6 A RG = 12 Ω, RD= 8.4 Ωsee fig. 10b-9.3-nsRise Time tr -47-Turn-Off Delay Time td(off) -16-Fall Time tf -18-Internal Drain Inductance LD Between lead,6 mm (0.25") from package and center of die contact -4.5-nH Internal Source Inductance LS-7.5-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--5.6APulsed Diode Forward CurrentaISM--18Body Diode Voltage VSDTJ = 25 °C, IS = 5.6 A, VGS = 0 Vb--2.5VBody Diode Reverse Recovery Time trrTJ = 25 °C, IF = 5.6 A,dI/dt = 100 A/µsb- 110 130 nsBody Diode Reverse Recovery Charge Qrr- 0.50 0.65 µCForward Turn-On Time tonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDGDocument Number: 91297 www.vishay.comS09-0057-Rev. A, 02-Feb-09 3IRL510, SiHL510Vishay SiliconixTYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, TC = 25 °CFig. 2 - Typical Output Characteristics, TC = 175 °CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperaturewww.vishay.com Document Number: 912974 S09-0057-Rev. A, 02-Feb-09IRL510, SiHL510Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaDocument Number: 91297 www.vishay.comS09-0057-Rev. A, 02-Feb-09 5IRL510, SiHL510Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CasePulse width ≤ 1 µsDuty factor ≤ 0.1 % RDVGSRGD.U.T.5.0 V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off)tfwww.vishay.com Document Number: 912976 S09-0057-Rev. A, 02-Feb-09IRL510, SiHL510Vishay SiliconixFig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitRGIAS0.01 ΩtpD.U.T.LVDS+-VDD5.0 VVary tp to obtainrequired IASIASVDSVDDVDStpQGSQGDQGVGCharge5.0 VD.U.T.3 mAVGSVDSIGID0.3 µF0.2 µF50 kΩ12 VCurrent regulatorCurrent sampling resistorsSame type as D.U.T.+-Document Number: 91297 www.vishay.comS09-0057-Rev. A, 02-Feb-09 7IRL510, SiHL510Vishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?91297.P.W.PerioddI/dtDiode recoverydV/dtRipple ≤ 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurrentBody diode forwardcurrentVGS = 10 V* VDDISDDriver gate driveD.U.T. ISDwaveformD.U.T. VDSwaveformInductor currentD = P.W.Period+-+++---*