2N4400 / MMBT4400NPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 40 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 6.0 VICCollector Current - Continuous600 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150°CSymbol Characteristic Max Units2N4400 *MMBT4400PDTotal Device DissipationDerate above 25°C6255.03502.8mWmW/°CRθJCThermal Resistance, Junction to Case 83.3°C/WRθJAThermal Resistance, Junction to Ambient 200 357°C/WCBESOT-23Mark: 83MMBT44002N4400CBETO-92 2001 Fairchild Semiconductor Corporation2N4400/MMBT4400, Rev A2N4400 / MMBT4400NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25°C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 VV(BR)CBOCollector-Base Breakdown VoltageIC = 100 µA, IE = 060 VV(BR)EBOEmitter-Base Breakdown VoltageIE = 100 µA, IC = 06.0 VICEXCollector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1µAIBLEmitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1µAON CHARACTERISTICS*hFEDC Current Gain VCE = 1.0 V, IC = 1.0 mAVCE = 1.0 V, IC = 10 mAVCE = 1.0 V, IC = 150 mAVCE = 2.0 V, IC = 500 mA20405020150VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB =15 mAIC = 500 mA, IB = 50 mA0.400.75VVVBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB =15 mAIC = 500 mA, IB = 50 mA0.75 0.951.2VVSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pFCibInput Capacitance VEB = 0.5 V, f = 140 kHz 30 pFhfeSmall-Signal Current Gain IC = 20 mA, VCE = 10 V,f = 100 MHz2.0hfeSmall-Signal Current Gain VCE = 10 V, IC = 1.0 mA, 20 250hieInput Impedance f = 1.0 kHz 0.5 7.5KΩhreVoltage Feedback Ratio 0.1 8.0x 10-4hoeOutput Admittance 1.0 30µmhosSWITCHING CHARACTERISTICS*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%tdDelay TimeVCC = 30 V, IC = 150 mA,15nstrRise Time IB1 = 15 mA ,VEB = 2 VtsStorage Time VCC = 30 V, IC = 150 mA 225 nstfFall Time IB1 = IB2 = 15 mA 30 ns20nsTypical CharacteristicsTypical Pulsed Current Gainvs Collector Current0.1 0.3 1 3 10 30 100 3000100200300400500I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 °C25 °C- 40 °CV = 5VCECollector-Emitter SaturationVoltage vs Collector Current 1101005000.10.20.30.4I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT25 °CCβ= 10125 °C- 40 °CBase-Emitter SaturationVoltage vs Collector Current 1 10 100 5000.40.60.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATCβ = 1025 °C125 °C- 40 °CBase-Emitter ON Voltage vsCollector Current0.1 1 10 250.20.40.60.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE (ON)CV = 5VCE 25 °C125 °C- 40 °CCollector-Cutoff Currentvs Ambient Temperature25 50 75 100 125 1500.1110100500T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 40VCBCBO°Emitter Transition and OutputCapacitance vs Reverse Bias Voltage0.1 1 10 10048121620REVERSE BIAS VOLTAGE (V)CAPACITANCE (pF)f = 1 MHzCobC NPN General Purpose Amplifierte(continued)2N4400 / MMBT4400Typical Characteristics (continued)Power Dissipation vsAmbient Temperature0 25 50 75 100 125 15000.250.50.751TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223TO-92SOT-23Turn On and Turn Off Timesvs Collector Current10 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = tont offB1CB2Ic10V = 25 VccSwitching Timesvs Collector Current10 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = trt sB1CB2Ic10V = 25 VcctftdNPN General Purpose Amplifier(continued)2N4400 / MMBT4400Typical Common Emitter Characteristics (f = 1.0kHz)Common Emitter Characteristics0 10203040506002468I - COLLECTOR CURRENT (mA)CHAR. RELATIVE TO VALUES AT I = 10mAV = 10 VCE CCT = 25 CA o hoe hre hfe hie Common Emitter Characteristics0 2040608010000.40.81.21.622.4T - AMBIENT TEMPERATURE ( C)CHAR. RELATIVE TO VALUES AT T = 25 CV = 10 VCE AAI = 10 mAC hoe hre hfe hie ooCommon Emitter Characteristics0 5 10 15 20 25 30 350.750.80.850.90.9511.051.11.151.21.251.3V - COLLECTOR VOLTAGE (V)CHAR. RELATIVE TO VALUES AT V = 10VCECET = 25 CA o hoe hre hfe hie I = 10 mACNPN General Purpose Amplifier(continued)2N4400 / MMBT4400Test Circuits30 V1.0 KΩΩΩΩΩ16 V0≤≤≤≤≤ 200ns≤≤≤≤≤ 200ns500 ΩΩΩΩΩ200 ΩΩΩΩΩ50 ΩΩΩΩΩ37 ΩΩΩΩΩ- 1.5 V1.0 KΩΩΩΩΩ6.0 V030 VFIGURE 1: Saturated Turn-On Switching TimerNOTE: BV = 5.0 VFIGURE 2: Saturated Turn-Off Switching TimeEBO1kNPN General Purpose Amplifier(continued)2N4400 / MMBT4400TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner