PowerPoint PresentationSlide 2Slide 3Slide 4Slide 5Slide 6Slide 7Slide 8Slide 9Slide 10Slide 11Slide 12Slide 13Slide 14Slide 15Slide 16Slide 17Slide 18Slide 19Slide 20Slide 21Slide 22Slide 23Slide 24Slide 25Slide 26Slide 27Slide 28Slide 29Chapter 3 – Diodes Introductionhttp://engr.calvin.edu/PRibeiro_WEBPAGE/courses/engr311/311_frames.htmlThe ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in the forward direction.The Ideal Diode(a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d) Equivalent circuit when v1 0 (e) Output waveform.Rectifier CircuitThe i-v characteristic of a silicon junction diode.Diode – i-v CharacteristicThe diode i-v relationship with some scales expanded and others compressed in order to reveal details. Diode – i-v CharacteristicSimplified physical structure of the junction diode. (Actual geometries are given on Appendix A.)Diode – Simplified Physical Structure(a) The pn junction with no applied voltage (open-circuited terminals). (b) The potential distribution along an axis perpendicular to the junction.Diode – Physical StructureThe pn junction excited by a constant-current source I in the reverse direction. To avoid breakdown, I is kept smaller than Is. Note that the depletion layer widens and the barrier voltage increases by Vr volts, which appears between the terminals as a reverse voltage.Diode –Physical StructureThe charge stored on either side of the depletion layer as a function of the reverse voltage Vr.The pn junction excited by a constant-current source supplying a current I in the forward direction. The depletion layer narrows and the barrier voltage decreases by V volts, which appears as an external voltage in the forward direction.Minority-carrier distribution in a forward-biased pn junction. It is assumed that the p region is more heavily doped than the n region; NA ND.A simple diode circuit.Fig. 3.19 Graphical analysis of the circuit in Fig. 3.18.Fig. 3.20 Approximating the diode forward characteristic with two straight lines.Fig. 3.21 Piecewise-linear model of the diode forward characteristic and its equivalent circuit representation.Fig. 3.23 Development of the constant-voltage-drop model of the diode forward characteristics. A vertical straight line (b) is used to approximate the fast-rising exponential.Fig. 3.24 The constant-voltage-drop model of the diode forward characteristic and its equivalent circuit representation.Fig. 3.25 Development of the diode small-signal model. Note that the numerical values shown are for a diode with n = 2.Fig. 3.26 Equivalent circuit model for the diode for small changes around bias point Q. The incremental resistance rd is the inverse of the slope of the tangent at Q, and VD0 is the intercept of the tangent on the vD axis (see Fig. 3.25).Fig. 3.27 The analysis of the circuit in (a), which contains both dc and signal quantities, can be performed by replacing the diode with the model of Fig. 3.26, as shown in (b). This allows separating the dc analysis [the circuit in (c)] from the signal analysis [the circuit in (d)].Fig. 3.30 Circuit symbol for a zener diode.Fig. 3.31 The diode i-v characteristic with the breakdown region shown in some detail.Fig. 3.32 Model for the zener diode.Fig. 3.36 Block diagram of a dc power supply.Fig. 3.37 (a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the diode replaced with its battery-plus-resistance model. (c) transfer characteristic of the rectifier circuit. (d) Input and output waveforms, assuming that rD R.Fig. 3.38 Full-wave rectifier utilizing a transformer with a center-tapped secondary winding. (a) Circuit. (b) Transfer characteristic assuming a constant-voltage-drop model for the diodes. (c) Input and output waveforms.Fig. 3.39 The bridge rectifier: (a) circuit and (b) input and output waveforms.Fig. 3.41 Voltage and current waveforms in the peak rectifier circuit with CR T. The diode is assumed ideal.Fig. 3.46 A variety of basic limiting
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