PowerPoint PresentationSlide 2Slide 3Slide 4Slide 5Slide 6Slide 7Slide 8Slide 9Slide 10Slide 11Slide 12Slide 13Slide 14Slide 15Slide 16Slide 17Slide 18Slide 19Slide 20Slide 21Slide 22Slide 23Slide 24Slide 25Slide 26Slide 27Slide 28Slide 29Slide 30Slide 31Slide 32Slide 33Slide 34Slide 35Slide 36Slide 37Slide 38Slide 39Slide 40Slide 41Slide 42Slide 43Slide 44Slide 45Slide 46Slide 47Slide 48Slide 49Slide 50Slide 51Slide 52Slide 53Slide 54Slide 55Slide 56Slide 57Slide 58Slide 59Slide 60Slide 61Slide 62Slide 63Slide 64Slide 65Slide 66Slide 67Slide 68Slide 69Slide 70Slide 71Slide 72Slide 73Slide 74Slide 75Slide 76Slide 77Slide 78Slide 79Slide 80Slide 81Slide 82Slide 83Slide 84Slide 85Slide 86Slide 87Slide 88Slide 89Slide 90Slide 91Slide 92Slide 93Slide 94Slide 95Slide 96Slide 97Slide 98Slide 99Slide 100Slide 101Slide 102Slide 103Slide 104Slide 105Slide 106Slide 107Slide 108Slide 109Slide 1101Single-Stage Integrated-Circuit AmplifiersMicroelectronic Circuits - Fifth Edition Sedra/Smith 2Copyright  2004 by Oxford University Press, Inc.Table 6.3Microelectronic Circuits - Fifth Edition Sedra/Smith 3Copyright  2004 by Oxford University Press, Inc.Figure 6.1 The intrinsic gain of the MOSFET versus bias current ID. Outside the subthreshold region, this is a plot of for the case: nCox = 20 A/V2, V9A = 20 V/m, L = 2 m, and W = 20 m.02 /A Dn oxA V C WL IMicroelectronic Circuits - Fifth Edition Sedra/Smith 4Copyright  2004 by Oxford University Press, Inc.Figure 6.2 Frequency response of a CS amplifier loaded with a capacitance CL and fed with an ideal voltage source. It is assumed that the transistor is operating at frequencies much lower than fT, and thus the internal capacitances are not taken into account.Microelectronic Circuits - Fifth Edition Sedra/Smith 5Copyright  2004 by Oxford University Press, Inc.Figure 6.3 Increasing ID or W/L increases the bandwidth of a MOSFET amplifier loaded by a constant capacitance CL.Microelectronic Circuits - Fifth Edition Sedra/Smith 6Copyright  2004 by Oxford University Press, Inc.Figure 6.4 Circuit for a basic MOSFET constant-current source.Microelectronic Circuits - Fifth Edition Sedra/Smith 7Copyright  2004 by Oxford University Press, Inc.Figure 6.5 Basic MOSFET current mirror.Microelectronic Circuits - Fifth Edition Sedra/Smith 8Copyright  2004 by Oxford University Press, Inc.Figure 6.6 Output characteristic of the current source in Fig. 6.4 and the current mirror of Fig. 6.5 for the case Q2 is matched to Q1.Microelectronic Circuits - Fifth Edition Sedra/Smith 9Copyright  2004 by Oxford University Press, Inc.Figure 6.7 A current-steering circuit.Microelectronic Circuits - Fifth Edition Sedra/Smith 10Copyright  2004 by Oxford University Press, Inc.Figure 6.8 The basic BJT current mirror.Microelectronic Circuits - Fifth Edition Sedra/Smith 11Copyright  2004 by Oxford University Press, Inc.Figure 6.9 Analysis of the current mirror taking into account the finite  of the BJTs.Microelectronic Circuits - Fifth Edition Sedra/Smith 12Copyright  2004 by Oxford University Press, Inc.Figure 6.10 A simple BJT current source.Microelectronic Circuits - Fifth Edition Sedra/Smith 13Copyright  2004 by Oxford University Press, Inc.Figure 6.11 Generation of a number of constant currents of various magnitudes.Microelectronic Circuits - Fifth Edition Sedra/Smith 14Copyright  2004 by Oxford University Press, Inc.Figure E6.8Microelectronic Circuits - Fifth Edition Sedra/Smith 15Copyright  2004 by Oxford University Press, Inc.Figure 6.12 Frequency response of a direct-coupled (dc) amplifier. Observe that the gain does not fall off at low frequencies, and the midband gain AM extends down to zero frequency.Microelectronic Circuits - Fifth Edition Sedra/Smith 16Copyright  2004 by Oxford University Press, Inc.Figure 6.13 Normalized high-frequency response of the amplifier in Example 6.5.Microelectronic Circuits - Fifth Edition Sedra/Smith 17Copyright  2004 by Oxford University Press, Inc.Figure 6.14 Circuits for Example 6.6: (a) high-frequency equivalent circuit of a MOSFET amplifier; (b) the equivalent circuit at midband frequencies; (c) circuit for determining the resistance seen by Cgs; and (d) circuit for determining the resistance seen by Cgd.Microelectronic Circuits - Fifth Edition Sedra/Smith 18Copyright  2004 by Oxford University Press, Inc.Figure 6.15 The Miller equivalent circuit.Microelectronic Circuits - Fifth Edition Sedra/Smith 19Copyright  2004 by Oxford University Press, Inc.Figure 6.16 Circuit for Example 6.7.Microelectronic Circuits - Fifth Edition Sedra/Smith 20Copyright  2004 by Oxford University Press, Inc.Figure E6.13Microelectronic Circuits - Fifth Edition Sedra/Smith 21Copyright  2004 by Oxford University Press, Inc.Figure 6.17 (a) Active-loaded common-source amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit diagram and using the small-signal model explicitly.Microelectronic Circuits - Fifth Edition Sedra/Smith 22Copyright  2004 by Oxford University Press, Inc.Figure 6.18 The CMOS common-source amplifier; (a) circuit; (b) i–v characteristic of the active-load Q2; (c) graphical construction to determine the transfer characteristic; and (d) transfer characteristic.Microelectronic Circuits - Fifth Edition Sedra/Smith 23Copyright  2004 by Oxford University Press, Inc.Figure 6.19 (a) Active-loaded common-emitter amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit and using the hybrid- model explicitly.Microelectronic Circuits - Fifth Edition Sedra/Smith 24Copyright  2004 by Oxford University Press, Inc.Figure 6.20 High-frequency equivalent-circuit model of the common-source amplifier. For the common-emitter amplifier, the values of Vsig and Rsig are modified to include the effects of r and rx; Cgs is replaced by C, Vgs by V, and Cgd by C.Microelectronic Circuits - Fifth Edition Sedra/Smith 25Copyright  2004 by Oxford University Press, Inc.Figure 6.21 Approximate equivalent circuit obtained by applying Miller’s theorem while neglecting CL and the load current component supplied by Cgd. This model works reasonably well when Rsig is large and the amplifier high-frequency response is dominated by the pole formed by Rsig and