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SRAM DESIGNS IN 160m CMOS AND CNTFET TECHNOLOGIES



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COMPARISON OF PERFORMANCE PARAMETERS OF SRAM DESIGNS IN 160m CMOS AND CNTFET TECHNOLOGIES Anuj Pushkama Sajna Raghavan and Hamid Mahmoodi School of Engineering San Francisco State University San Francisco CA USA Email anujp sajju mahmoodi sfsu edu predicted model of 16nm High K metal gate 6 has substantially increased the choice of device models for circuit designing It is essential to know the potential of what both the technologies have to offer with their least dimensions available i e for CMOS of 16nm and CNTFET model of 10nm In our research we use the predicted model for CNTFET proposed by re searchers from Stanford University 1 which gave us the opportunity to use minimum channel length of CNTFET as IOnm Abstract CMOS devices are scaling down to nano ranges resulting in increased process variations and short channel effects which not only affect the reliability of the device but also performance expectations Carbon Nanotube Field Effect Transistor CNTFET is a very promising and superior technology for its applications to circuit design In this paper we intend to evaluate and compare the performance parameters of a traditional 6T SRAM cell between a predictive 16nm Complementary Metal Oxide Semiconductor CMOS technology and CNTFET The model used to simulate CNT transistor is a tentative model from the researchers of Stanford University which is not yet practically implemented Since the dimensions of MOSFETS are reduced aggressively it is essential to know the potential of what both the technologies have to offer with their least dimensions available The SRAM design uses the smallest transistors possible and is also susceptible to reliability issues and process variations making it an ideal benchmark circuit to compare the two technologies Our simulations results show that CNTFET based SRAM design is a viable design to choose compared to its CMOS counterpart The results show that there is a 52 7 increase in SNM of the memory cell Meanwhile the cell becomes 5



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