DatasheetDisclaimerSilicon PIN Photodiode, RoHS Compliant www.vishay.com For technical questions, contact: [email protected] Number: 81520382 Rev. 1.5, 11-Aug-08BPW24RVishay SemiconductorsDESCRIPTIONBPW24R is a high sensitive silicon planar photodiode in astandard TO-18 hermetically sealed metal case with a glasslens.A precise alignment of the chip gives a good coincidence ofmechanical and optical axes. The device features a lowcapacitance and high speed even at low supply voltages.FEATURES• Package type: leaded• Package form: TO-18• Dimensions (in mm): Ø 4.7• Radiant sensitive area (in mm2): 0.78• High photo sensitivity• High radiant sensitivity• Suitable for visible and near infrared radiation• Fast response times• Angle of half sensitivity: ϕ = ± 12°• Hermetically sealed package• Cathode connected to package• Central chip alignment• Lead (Pb)-free component in accordance withRoHS 2002/95/EC and WEEE 2002/96/ECAPPLICATIONS• High speed photo detectorNoteTest condition see table “Basic Characteristics”NoteMOQ: minimum order quantityNoteTamb = 25 °C, unless otherwise specified948642PRODUCT SUMMARYCOMPONENT Ira (µA) ϕ (deg) λ0.5 (nm)BPW24R 60 ± 12 600 to 1050ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORMBPW24R Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18ABSOLUTE MAXIMUM RATINGSPARAMETER TEST CONDITION SYMBOL VALUE UNITReverse voltage VR60 VPower dissipation Tamb ≤ 25 °C PV210 mWJunction temperature Tj125 °COperating temperature range Tamb- 40 to + 125 °CStorage temperature range Tstg- 40 to + 125 °CSoldering temperature t ≤ 5 s Tsd260 °CThermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA350 K/WDocument Number: 81520 For technical questions, contact: [email protected]. 1.5, 11-Aug-08 383BPW24RSilicon PIN Photodiode, RoHS CompliantVishay SemiconductorsNoteTamb = 25 °C, unless otherwise specifiedBASIC CHARACTERISTICSTamb = 25 °C, unless otherwise specifiedFig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient TemperatureBASIC CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNITBreakdown voltage IR = 100 µA, E = 0 V(BR)60 200 VReverse dark current VR = 50 V, E = 0 Iro210nADiode capacitanceVR = 0 V, f = 1 MHz, E = 0 CD11 pFVR = 5 V, f = 1 MHz, E = 0 CD3.8 pFVR = 20 V, f = 1 MHz, E = 0 CD2.5 pFOpen circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo450 mVTemperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo- 2 mV/KShort circuit current Ee = 1 mW/cm2, λ = 950 nm Ik55 µATemperature coefficient of IkEA = 1 klx TKIk0.1 %/KReverse light currentEe = 1 mW/cm2, λ = 950 nm,VR = 20 VIra45 60 µAAbsolute Spectral SensitivityVR = 5 V, λ = 870 nm s(λ) 0.60 A/WVR = 5 V, λ = 900 nm s(λ) 0.55 A/WAngle of half sensitivity ϕ ± 12 degWavelength of peak sensitivity λp900 nmRange of spectral bandwidth λ0.5600 to 1050 nmRise time VR = 20 V, RL = 50 Ω, λ = 820 nm tr7nsFall time VR = 20 V, RL = 50 Ω, λ = 820 nm tf7ns40 60 8012094 845410020100101102103104VR=50VTamb - Ambient Temperature (°C)Iro - Reverse Dark Current (nA)0.60.81.01.21.494 8409VR=5Vλ = 950 nm100806040200I - Relative Reverse Light CurrentT - Ambient Temperature (°C)ambra relwww.vishay.com For technical questions, contact: [email protected] Number: 81520384 Rev. 1.5, 11-Aug-08BPW24RVishay SemiconductorsSilicon PIN Photodiode, RoHS CompliantFig. 3 - Reverse Light Current vs. IrradianceFig. 4 - Reverse Light Current vs. Reverse VoltageFig. 5 - Diode Capacitance vs. Reverse VoltageFig. 6 - Relative Spectral Sensitivity vs. WavelengthFig. 7 - Relative Radiant Sensitivity vs. Angular Displacement0.01 0.1 10.111010010001094 8455VR=10V= 950 nmλEe - Irradiance (mW/cm2)Ira - Reverse Light Current (µA)0.1 1 1011010010094 84561mW/cm20.5 mW/cm20.2 mW/cm20.1 mW/cm20.05 mW/cm20.02 mW/cm2= 950 nmλVR - Reverse Voltage (V)Ira - Reverse Light Current (µA)0246812100.1 1 10CD - Diode Capacitance (pF)VR - Reverse Voltage (V)10094 8439E = 0f = 1 MHz350 550 750 95000.20.40.60.81.0115094 8458λ - Wavelength (nm)S (λ)rel - Relative Spectral Sensitivity0.4 0.2 094 84590.60.90.80°30°10° 20°40°50°60°70°80°0.71.0Srel - Relative Sensitivityϕ - Angular DisplacementDocument Number: 81520 For technical questions, contact: [email protected]. 1.5, 11-Aug-08 385BPW24RSilicon PIN Photodiode, RoHS CompliantVishay SemiconductorsPACKAGE DIMENSIONS in millimetersCA2.54 nom. 5.5± 0.156.15± 0.2513.2± 0.7 Ø 0.45+0.02-0.05Lens 4± 0.05Ø 4.69+ 0.02- 0.07Chip positionDrawing-No.: 6.503-5022.02-4specificationsaccording to DINtechnical drawings(2.5)Issue: 1; 24.08.9814487Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice. 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