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ENEE 313, Spr. ’09 Quiz VII - Apr 8, 2009Name:Assume T = 300 K for all questions, such that the thermal voltage kT/q = 0.026 V.1. Consider two pn-junction devices, Diode 1 and Diode 2, made from the same m aterial suchthat niis the same for both devices. Both are step-junction devices with uniform doping oneither side. Doping concentrations for Diode 1 are NA1= ND1= 10171/cm3. For Diode 2,the p-side is doping is heavier, with NA2= 5 × 10181/cm3.(a) (3 pts) If both diodes have the same built-in junction potential at the same temperatureat equilibrium (V01= V02), what is the n-side doping ND2for Diode 2?(b) (2pts) Calc ulate this built-in potential. (n2i= 2.1 × 10201/cm3.)V0=kTqln(NANDn2i)WD=s2SiV0q(NA1+ ND1NA1ND1)(1)(Turn over for the last question.)12. (a) (2pts) Which diode will have a wider net depletion region width WDat equilibrium?(Hint: Inspect the expression for the depletion region width. You do not need to calculateWDexactly for either diode.)(b) (3 pts) If WD1is 0.146 µm, find WD2. An approximate answer is all right, but state theapproximation clearly. (Hint:√2 = 1.414.) In which side of Diode 2 will the larger partof its depletion region be?Required equations:V0=kTqln(NANDn2i)WD=s2SiV0q(NA1+


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UMD ENEE 313 - Quiz #7

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