MCM6264C1MOTOROLA FAST SRAM8K x 8 Bit Fast Static RAMThe MCM6264C is fabricated using Motorola’s high–performance silicon–gateCMOS technology. Static design eliminates the need for external clocks or timingstrobes, while CMOS circuitry reduces power consumption and provides forgreater reliability.This device meets JEDEC standards for functionality and pinout, and is avail-able in plastic dual–in–line and plastic small–outline J–leaded packages.• Single 5 V ± 10% Power Supply• Fully Static — No Clock or Timing Strobes Necessary• Fast Access Times: 12, 15, 20, 25, and 35 ns• Equal Address and Chip Enable Access Times• Output Enable (G) Feature for Increased System Flexibility and toEliminate Bus Contention Problems• Low Power Operation: 110 – 150 mA Maximum AC• Fully TTL Compatible — Three State OutputROWDECODERMEMORY MATRIX256 ROWS x 32x 9 COLUMNSINPUTDATACONTROLCOLUMN I/OCOLUMN DECODERDQ0E1WVCCVSSA1DQ7GBLOCK DIAGRAME2A0 A6 A10 A12A11A9A8A7A5A4A3A2Order this documentby MCM6264C/DMOTOROLASEMICONDUCTOR TECHNICAL DATAPIN ASSIGNMENTMCM6264CP PACKAGE300 MIL PLASTICCASE 710B–01A0 – A12 Address Input. . . . . . . . . . . . . DQ0 – DQ7 Data Input/Data Output. . . WWrite Enable. . . . . . . . . . . . . . . . . . . . GOutput Enable. . . . . . . . . . . . . . . . . . . E1, E2 Chip Enable. . . . . . . . . . . . . . . . . VCCPower Supply (+ 5 V). . . . . . . . . . . VSSGround. . . . . . . . . . . . . . . . . . . . . . . PIN NAMESJ PACKAGE300 MIL SOJCASE 810B–0354321109876111213142021222324252619272818171615A3A6A7A12NCDQ0A2A5VSSDQ2DQ1A4A1A0A9A8E2WVCCDQ4DQ5DQ6DQ3E1GA11DQ7A10REV 25/95 Motorola, Inc. 1995MCM6264C2MOTOROLA FAST SRAMTRUTH TABLE (X = Don’t Care)E1E2 G W Mode VCC Current Output CycleH X X X Not Selected ISB1, ISB2High–Z —X L X X Not Selected ISB1, ISB2High–Z —L H H H Output Disabled ICCAHigh–Z —L H L H Read ICCADoutRead CycleL H X L Write ICCAHigh–Z Write CycleABSOLUTE MAXIMUM RATINGS (See Note)RatingSymbol Value UnitPower Supply Voltage VCC– 0.5 to + 7.0 VVoltage Relative to VSS for Any PinExcept VCCVin, Vout– 0.5 to VCC + 0.5 VOutput Current Iout± 20 mAPower Dissipation PD1.0 WTemperature Under Bias Tbias– 10 to + 85 °COperating Temperature TA0 to + 70 °CStorage Temperature — Plastic Tstg– 55 to + 125 °CNOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS areexceeded. Functional operation should be restricted to RECOMMENDED OPER-ATING CONDITIONS. Exposure to higher than recommended voltages forextended periods of time could affect device reliability.DC OPERATING CONDITIONS AND CHARACTERISTICS(VCC = 5.0 V ± 10%, TA = 0 to +70°C, Unless Otherwise Noted)RECOMMENDED OPERATING CONDITIONSParameter Symbol Min Typ Max UnitSupply Voltage (Operating Voltage Range) VCC4.5 5.0 5.5 VInput High Voltage VIH2.2 — VCC + 0.3** VInput Low Voltage VIL– 0.5* — 0.8 V*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)DC CHARACTERISTICSParameter Symbol Min Max UnitInput Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I)— ± 1 µAOutput Leakage Current (E1 = VIH, E2 = VIL, or G = VIH, Vout = 0 to VCC) Ilkg(O)— ± 1 µAOutput Low Voltage (IOL = 8.0 mA) VOL— 0.4 VOutput High Voltage (IOH = – 4.0 mA) VOH2.4 — VPOWER SUPPLY CURRENTSParameter Symbol – 12 – 15 – 20 – 25 – 35 UnitAC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) ICCA150 140 130 120 110 mAAC Standby Current (E1 = VIH or E2 = VIL, VCC = Max, f = fmax) ISB145 40 35 30 30 mAStandby Current (E1 ≥ VCC – 0.2 V or E2 ≤ VSS + 0.2 V,Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)ISB220 20 20 20 20 mACAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)ParameterSymbol Max UnitAddress Input Capacitance Cin6 pFControl Pin Input Capacitance (E1, E2, G, W) Cin6 pFI/O Capacitance CI/O7 pFThis device contains circuitry to protect theinputs against damage due to high static volt-ages or electric fields; however, it is advisedthat normal precautions be taken to avoidapplication of any voltage higher than maxi-mum rated voltages to these high–impedancecircuits.This CMOS memory circuit has been de-signed to meet the dc and ac specificationsshown in the tables, after thermal equilibriumhas been established. The circuit is in a testsocket or mounted on a printed circuit boardand transverse air flow of at least 500 linearfeet per minute is maintained.MCM6264C3MOTOROLA FAST SRAMAC OPERATING CONDITIONS AND CHARACTERISTICS(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . . Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Rise/Fall Time 5 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . Output Load See Figure 1A Unless Otherwise Noted. . . . . . . . . . . . READ CYCLE (See Notes 1 and 2)– 12 – 15 – 20 – 25 – 35Parameter Symbol Min Max Min Max Min Max Min Max Min Max Unit NotesRead Cycle Time tAVAV12 — 15 — 20 — 25 — 35 — ns 3Address Access Time tAVQV— 12 — 15 — 20 — 25 — 35 nsEnable Access Time tELQV— 12 — 15 — 20 — 25 — 35 ns 4Output Enable Access Time tGLQV— 6 — 8 — 10 — 11 — 12 nsOutput Hold from Address Change tAXQX4 — 4 — 4 — 4 — 4 — nsEnable Low to Output Active tELQX4 — 4 — 4 — 4 — 4 — ns 5, 6 ,7Enable High to Output High–Z tEHQZ0 6 0 8 0 9 0 10 0 11 ns 5, 6, 7Output Enable Low to Output Active tGLQX0 — 0 — 0 — 0 — 0 — ns 5, 6, 7Output Enable High to Output High–Z tGHQZ0 6 0 7 0 8 0 9 0 10 ns 5, 6, 7Power Up Time tELICCH0 — 0 — 0 — 0 — 0 — nsPower Down Time tEHICCL— 12 — 15 — 20 — 25 — 35 nsNOTES:1. W is high for read cycle.2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.3. All timings are referenced from the last valid address to the first transitioning address.4. Addresses valid prior to or coincident with E going low.5. At any given voltage and temperature, tEHQZ (max) is less than tELQX (min), and tGHQZ (max) is less than tGLQX (min), both for a given device and from device to device.6. Transition is measured ± 500 mV …
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