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Real-Time In-Situ Chemical Sensing in GaN MOCVD for Advanced Process Control



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Real Time In Situ Chemical Sensing in GaN MOCVD for Advanced Process Control Univ of Maryland Soon Cho Gary W Rubloff Northrop Grumman Corp Michael E Aumer Darren B Thomson Deborah P Partlow MS WeM2 Nov 5 2003 Soon Cho AVS 50th International Symposium Baltimore 1 INTRODUCTION Advanced Process Control APC has become pervasive in Si ULSI manufacturing Maintain process targets wafer to wafer or real time course correction Identify equipment faults fault management In situ chemical sensing is key APC enabler and driver In situ chemical sensors provide viable quantitative real time metrology Quantitative metrology for course correction Semi quantitative sensing for fault detection and classification Semi quantitative sensing for process understanding Better than 1 precision in thickness control W CVD 3 sensors mass spec acoustic FTIR Real time end point control demonstrated W CVD Multi use compatible with fault detection and process learning Apply to GaN MOCVD for advanced electronic applications Nov 5 2003 Soon Cho AVS 50th International Symposium Baltimore 2 GaN based Semiconductor Technology Monolithic Microwave Integrated Circuit Power amplifiers Low noise amplifiers Mixers Multipliers Current modulation achieved with variation of gate voltage Current Limitations Robust high temperature operation Larger bias voltage high power Greater speed and bandwidth Greater power dissipation Nov 5 2003 Drain 2DEG forms conducting channel Benefits Gate Source HFET can play a role in Heterojunction Field Effect Transistor Poor product reproducibility Process product quality relationship largely unknown Poor understanding of intrinsic chemistry Soon Cho AVS 50th International Symposium Baltimore 3 GaN Heterostructure Design Composition 30 to 35 AlN High breakdown suffers Low 2DEG diminished AlxGa1 xN cap Thickness 20 to 25 nm Thick pinch off voltage increases Thin 2DEG diminished Crystal Quality Material Quality nbkg 1014 cm 3 even lower desired Thickness 1 um thick GaN layer Cap



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