UCSB ECE 145 - RF & MICROWAVE DISCRETE (6 pages)

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RF & MICROWAVE DISCRETE



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RF & MICROWAVE DISCRETE

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Pages:
6
School:
University of California, Santa Barbara
Course:
Ece 145 - Communication Electronics
Communication Electronics Documents
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140 COMMERCE DRIVE MONTGOMERYVILLE PA 18936 1013 PHONE 215 631 9840 FAX 215 631 9855 2N5179 RF MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN TO 72 packaged VHF UHF Transistor Low Noise NF 4 5 dB max 200 MHz High Current Gain Bandwidth Product 1 4 Ghz typ 10 mAdc 2 1 Characterized with S Parameters 3 4 1 Emitter 2 Base 3 Collector 4 Case TO 72 DESCRIPTION Silicon NPN transistor designed for VHF and UHF equipment Ideal for pre driver low noise amplifier and oscillator applications ABSOLUTE MAXIMUM RATINGS Tcase 25 C Symbol VCEO Parameter Collector Emitter Voltage Value 12 Unit Vdc VCBO VEBO Collector Base Voltage 20 Vdc Emitter Base Voltage 2 5 Vdc IC Collector Current 50 mA 300 1 71 mWatts mW C Thermal Data PD Total Device Dissipation TA 25 C Derate above 25 C MSC1305 PDF 10 25 99 2N5179 ELECTRICAL SPECIFICATIONS Tcase 25 C STATIC off Symbol VCEO sus BVCBO BVEBO ICBO Test Conditions Value Min Typ Max Unit Collector Emitter Sustaining Voltage IC 3 0 mAdc IB 0 12 Vdc Collector Base Breakdown Voltage IC 1 0 Adc IE 0 20 Vdc Emitter Base Breakdown Voltage IE 0 01 mAdc IC 0 2 5 02 A DC Current Gain IC 3 0 mAdc VCE 1 0 Vdc 25 250 Base Emitter Saturation Voltage IC 10 mAdc IB 1 0 mAdc 1 0 Vdc Collector Emitter Saturation Voltage IC 10 mAdc IB 1 0 mAdc 0 4 Vdc Collector Cutoff Current VCB 15 Vdc IE 0 Vdc on HFE VBE sat VCE sat DYNAMIC Symbol fT CCB Test Conditions Current Gain Bandwidth Product IC 5 0 mAdc VCE 6 Vdc f 100 MHz Collector base Capacitance VCB 10 Vdc IE 0 f 1 0 MHz MSC1305 PDF 10 25 99 Value Min Typ Max Unit 900 1500 MHz 1 0 pF 2N5179 FUNCTIONAL Symbol NF GPE Test Conditions Noise Figure figure 1 Common Emitter Amplifier Power Gain figure 1 PIN RS 50 OHMS Value Min Typ Max Unit IC 1 5 mAdc VCE 6 0 Vdc f 200 MHz 4 5 dB IC 1 5 mAdc VCE 6 0 Vdc f 200 MHz 20 dB POUT RL 50 OHMS Figure 1 200 MHz Amplifier for Power Gain and Noise Figure specifications MSC1305 PDF 10 25 99 2N5179 FUNCTIONAL CONT Symbol G U max MAG 2 S21 Test Conditions Maximum Unilateral Gain 1 Maximum Available Gain Insertion Gain Value Min Typ Max Unit IC 5 mAdc VCE 6 0 Vdc f 200 MHz 17 dB IC 5 mAdc VCE 6 0 Vdc f 200 MHz 18 dB IC 5 mAdc VCE 6 0 Vdc f 200 MHz 12 dB Note 1 Maximum Unilateral Gain S21 2 1 S11 2 1 S22 2 Table 1 Common Emitter S Parameters VCE 6 V IC 5 mA f S11 S21 S12 S22 MHz S11 S21 S12 S22 100 471 90 6 78 122 023 64 844 51 200 314 145 4 20 100 034 58 780 93 300 230 156 2 76 91 043 65 768 134 400 171 108 2 17 86 056 63 756 177 500 168 54 1 86 79 062 62 741 140 600 149 9 1 53 71 069 66 740 98 700 137 72 1 31 67 073 71 739 54 800 119 129 1 18 64 092 74 744 8 900 153 174 1 13 58 101 68 742 38 1000 171 122 979 49 106 71 749 82 MSC1305 PDF 10 25 99 2N5179 MSC1305 PDF 10 25 99 This datasheet has been downloaded from www DatasheetCatalog com Datasheets for electronic components


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