MSC1305.PDF 10-25-992N5179DESCRIPTION:Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications.ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)Symbol Parameter Value UnitVCEOCollector-Emitter Voltage 12 VdcVCBOCollector-Base Voltage 20 VdcVEBOEmitter-Base Voltage 2.5 VdcICCollector Current 50 mAThermal DataPDTotal Device Dissipation @ TA = 25ºCDerate above 25ºC3001.71mWattsmW/ ºC12341. Emitter2. Base3. Collector4. Case TO-72Features• Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc • Characterized with S-ParametersRF & MICROWAVE DISCRETELOW POWER TRANSISTORS140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855MSC1305.PDF 10-25-992N5179ELECTRICAL SPECIFICATIONS (Tcase = 25°C)STATIC(off)Symbol Test Conditions ValueMin. Typ. Max. UnitVCEO(sus) Collector-Emitter Sustaining Voltage(IC = 3.0 mAdc, IB = 0) 12 - - VdcBVCBO Collector-Base Breakdown Voltage(IC=1.0 µAdc, IE=0)20 - - VdcBVEBO Emitter Base Breakdown Voltage(IE = 0.01 mAdc, IC = 0) 2.5 - - VdcICBO Collector Cutoff Current(VCB = 15 Vdc, IE = 0) - - .02µA (on)HFE DC Current Gain(IC = 3.0 mAdc, VCE = 1.0 Vdc) 25 - 250-VBE(sat) Base-Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)- -1.0 VdcVCE(sat) Collector-Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)- -0.4 VdcDYNAMICSymbol Test Conditions ValueMin. Typ. Max. UnitfTCurrent-Gain - Bandwidth Product(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 900 1500 - MHzCCB Collector-base Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)-- 1.0 pFMSC1305.PDF 10-25-992N5179FUNCTIONALSymbol Test Conditions ValueMin. Typ. Max. UnitNF Noise Figure (figure 1) IC = 1.5 mAdc, VCE = 6.0Vdc, f = 200 MHz - -4.5dBGPE Common-Emitter AmplifierPower Gain (figure 1)IC = 1.5 mAdc, VCE = 6.0Vdc, f = 200 MHz 20 - - dBPOUT(RL=50 OHMS)PIN(RS=50 OHMS)Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications.MSC1305.PDF 10-25-992N5179FUNCTIONAL (CONT)Symbol Test Conditions ValueMin. Typ. Max. UnitGU maxMaximum Unilateral Gain (1) IC = 5 mAdc, VCE = 6.0 Vdc,f = 200 MHz - 17-dBMAG Maximum Available Gain IC = 5 mAdc, VCE = 6.0 Vdc,f = 200 MHz - 18-dB|S21|2Insertion Gain IC = 5 mAdc, VCE = 6.0 Vdc,f = 200 MHz - 12 - dBNote: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2)Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA fS11S21S12S22(MHz) |S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ100 .471 -90 6.78 122 .023 64 .844 -51200 .314 -145 4.20 100 .034 58 .780 -93300 .230 156 2.76 91 .043 65 .768 -134400 .171 108 2.17 86 .056 63 .756 -177500 .168 54 1.86 79 .062 62 .741 140600 .149 -9 1.53 71 .069 66 .740 98700 .137 -72 1.31 67 .073 71 .739 54800 .119 -129 1.18 64 .092 74 .744 8900 .153 -174 1.13 58 .101 68 .742 -381000 .171 122 .979 49 .106 71 .749 -82MSC1305.PDF 10-25-992N5179This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic
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