U-M EECS 511 - Plasma Chemistry and Reaction Mechanism (20 pages)

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Plasma Chemistry and Reaction Mechanism



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Plasma Chemistry and Reaction Mechanism

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Pages:
20
School:
University of Michigan
Course:
Eecs 511 - A/D Interfaces

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Properties of c C4F8 inductively coupled plasmas II Plasma chemistry and reaction mechanism for modeling of Ar c C4F8 O2 discharges Alex V Vasenkova University of Illinois Department of Electrical and Computer Engineering 1406 West Green Street Urbana Illinois 61801 Xi Li and Gottlieb S Oehrlein Department of Materials Science and Engineering and Institute for Research in Electronics and Applied Physics University of Maryland College Park Maryland 20742 2115 Mark J Kushnerb University of Illinois Department of Electrical and Computer Engineering 1406 West Green Street Urbana Illinois 61801 Received 12 September 2003 accepted 9 February 2004 published 27 April 2004 Gas mixtures containing Ar c C4 F8 O2 and CO are often used for the plasma etching of silicon dioxide Gas phase reaction mechanisms are required for first principles modeling of these systems to both provide insights to the plasma chemistry and to help optimize the process In this article results from computational and experimental investigations of the plasma chemistry of inductively coupled plasmas ICPs sustained in Ar O2 Ar c C4 F8 and O2 c C4 F8 gas mixtures with and without magnetic confinement are discussed These results were used to develop a reaction mechanism for low pressure and low temperature plasmas sustained in mixtures initially consisting of any combination of Ar c C4 F8 O2 CO Predictions for ion saturation current and ion mass fractions were compared to experiments for validation The consequences of charge exchange of fluorocarbon species with Ar and CO on the ratio of light to heavy fluorocarbon ion densities in Ar c C4 F8 O2 CO plasmas are discussed We found that the electron density and ion saturation current significantly increase with the addition of Ar to c C4 F8 but weakly depend on the addition of O2 The ratio of light to heavy fluorocarbon ion densities increases with power especially for ICPs with magnetic confinement 2004 American Vacuum Society DOI 10 1116 1 1697483 I



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