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Effect of ion energy on photoresist etching



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JOURNAL OF APPLIED PHYSICS VOLUME 89 NUMBER 10 15 MAY 2001 Effect of ion energy on photoresist etching in an inductively coupled traveling wave driven large area plasma source K Takechia and M A Liebermanb Department of Electrical Engineering and Computer Sciences University of California Berkeley California 94720 Received 17 November 2000 accepted for publication 21 February 2001 We report on the effect of ion energy on photoresist etching in an inductively coupled large area plasma source driven by a 13 56 MHz traveling wave with oxygen gas To control the ion energy at the substrate surface the electrode on which the substrate is placed is independently driven by a capacitively coupled 1 MHz power source The etch rate increases with increasing ion energy for gas pressure ranging from 1 to 100 mTorr Ion induced desorption rate constants etch yields are shown to be proportional to the square root of the ion energy An increase in the ion energy leads to etch uniformity improvement over the processing area of 40 cm 50 cm particularly at a low gas pressure of 5 mTorr A modified photoresist etch kinetics model combined with a spatially varying oxygen discharge model is used to explain these experimental results 2001 American Institute of Physics DOI 10 1063 1 1364648 I INTRODUCTION toresist etch kinetics model combined with the spatiallyvarying oxygen discharge model introducing the functional dependence of etch yields versus ion bombarding energy A set of etch rate data and the corresponding self bias voltages are used to obtain the functional dependence Inductively coupled plasma sources have been studied extensively in the past ten years as candidates for advanced etch and deposition processing tools 1 5 The driving forces for the effort are the recognition of their capabilities to generate high density plasmas under low pressures and control ion neutral fluxes and the ion bombarding energy independently 6 Although inductively coupled plasma sources have many merits



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