SJSU EE 225A - Fabrication and Testing of High Gain Transistors (4 pages)

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Fabrication and Testing of High Gain Transistors



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Fabrication and Testing of High Gain Transistors

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Pages:
4
School:
San Jose State University
Course:
Ee 225a - Analog Ic Transistor Process Design
Analog Ic Transistor Process Design Documents

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According to the Equation 2 F is a function of the doping Fabrication and Testing of High Gain Transistors Jason Leung Master s Student Toby Ling Master s Student Varun Shah Master s Student Abstract The goal of the project was to understand the fundamentals of analog IC processing by designing and fabricating a high DC gain NMOS transistor High gain instead of high speed is present in the market especially in neuron related applications The authors had the ability to adjust oxidation and well drive times and temperatures to achieve a certain threshold voltage on the transistors The devices were fabricated and tested to confirm functionality Certain values deviated from the expected results showing the importance of testing devices after they are done fabricating Proper evaluation of the wafers needs to be done to ensure a higher yield rate To obtain high DC gain the proposed method was to operate the device in subthreshold region where the GM ID was high The devices were biased to operate in the region and the expected values of the gain were high In the end the devices displayed characteristics of an NMOS transistor yet they need to be biased in such a way to optimize gain I INTRODUCTION T he primary objective of the project was to successfully design a MOS transistor with a practical VT value to be used for high gain analog applications The first stage of the project was to design a simple MIS capacitor to give a quick yet intuitive understanding about how the process works A successful design of the MIS capacitor paved the road to designing the 4 mask NMOS transistor due to their similar characteristics Due to time constraints only a limited number of factors were able to be controlled by the students such as oxidation time and temperature and well drive time and temperature This turned out to be sufficient enough since the goal was to design for a threshold voltage According to the equation 1 V T ms Qi C ox F 0259 ln Where QD Cox NA ni Q D 2 s qN A F C ox ox t



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